2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices, and Materials

[D-1] GaN Device Technologies I

Tue. Sep 11, 2018 2:00 PM - 3:15 PM Room 221 (School of Engineering Bldg.2 North Wing second floor)

Session Chair: K. Tsuda (Toshiba Infrastructure Systems & Solutions Corp.), K. Hirama (NTT BRL)

2:00 PM - 2:30 PM

[D-1-01 (Invited)] Novel Vertical GaN Power Devices

Y. Zhang1, M. Sun1, A. Munoz1, J.A. Perozek1, X. Gao2, K. Shepard3, S. Bedell4, D. Sadana4,T. Palacios1 (1.MIT (USA), 2.IQE RF LLC (USA), 3.Columbia Univ. (USA), 4.IBM T.J. Watson Res. Center (USA))

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