2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices, and Materials

[D-7] GaN Device Technologies II

Thu. Sep 13, 2018 9:00 AM - 10:45 AM Room 221 (School of Engineering Bldg.2 North Wing second floor)

Session Chair: T. Suzuki (JAIST), T. Ide (AIST)

9:00 AM - 9:30 AM

[D-7-01 (Invited)] Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -

T. Oka1, T. Ina1, Y. Ueno1, N. Tanaka1, J. Kurosaki1, T. Suzuki1, J. Nishii1, K. Hasegawa1, K. Yasunishi1, G. Nishio1, S. Murakami1, N. Murakami1 (1.TOYODA GOSEI Co., Ltd. (Japan))

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