2018 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices, and Materials

[D-7] GaN Device Technologies II

Thu. Sep 13, 2018 9:00 AM - 10:45 AM Room 221 (School of Engineering Bldg.2 North Wing second floor)

Session Chair: T. Suzuki(JAIST), T. Ide(AIST)

9:00 AM - 9:30 AM

[D-7-01 (Invited)] Recent Topics of Vertical GaN Power Devices-Trench MOS SBDs and Trench MOSFETs

T. Oka1 (1. Toyoda Gosei Co., Ltd.(Japan))