Ferroelectric HfO<sub>2</sub> for Memory Applications and Unconventional Computing

H. Mulaosmanovic

doi:https://doi.org/10.7567/SSDM.2019.H-3-01

9:00 AM - 9:30 AM

[H-3-01 (Invited)] Ferroelectric HfO₂ for Memory Applications and Unconventional Computing

^○H. Mulaosmanovic¹, E.T. Breyer¹, U. Schröder¹, T. Mikolajick^1,2, S. Slesazeck¹ (1.NaMLab gGmbH (Germany), 2.Chair of Nanoelectronic Materials (Germany))

https://doi.org/10.7567/SSDM.2019.H-3-01

2019 International Conference on Solid State Devices and Materials

[H-3-01 (Invited)] Ferroelectric HfO2 for Memory Applications and Unconventional Computing

[H-3-01 (Invited)] Ferroelectric HfO₂ for Memory Applications and Unconventional Computing