2020 International Conference on Solid State Devices and Materials

Presentation information

Oral presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[K-4] III-V, Nitride, and Related Compound Semiconductors

Tue. Sep 29, 2020 11:00 AM - 12:00 PM Room K

Session Chair: Takuya Hoshi (NTT Device Tech. Labs.), Shingo Ogawa (Toray Research Center, Inc.)

11:00 AM - 11:30 AM

[K-4-01 (Invited)] Gate Stack Technology for Advanced GaN-based MOS Devices

〇Heiji Watanabe1 (1. Osaka University, Graduate School of Engineering(Japan))

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