Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

10:45 AM - 11:15 AM

[D-4-01 (Invited)] Reduction of Interface State Density in the SiC MOS Structures by a Non-oxidation Process

〇Tsunenobu Kimoto¹, Keita Tachiki¹, Takuma Kobayashi^1,2, Yuichiro Matsushita² (1.Kyoto Univ., 2.Tokyo Inst. Tech.)