〇Takayoshi Shimura¹, Ryoga Yamaguchi¹, Naoto Tabuchi¹, Masato Kondo¹, Mizuki Kuniyoshi², Takuji Hosoi³, Takuma Kobayashi¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. ULVAC-Osaka Univ. Joint Res. Lab. for Future Tech. (Japan), 3. Kwansei Gakuin Univ. (Japan))

Presentation style: On-site (in-person)

15:15 〜 15:30

[A-2-05] Optical Properties of Innovative GeSe_1-xTe_x Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications

〇Anthony Albanese¹, Martina Tomelleri¹, Jean-Baptiste Dory¹, Christophe Licitra¹, Benoît Charbonnier¹, Jean-Baptiste Jager², Aurélien Coillet³, Benoît Cluzel³, Pierre Noé¹ (1. Univ. Grenoble-Alpes, CEA-LETI (France), 2. Univ. Grenoble-Alpes, CEA-IRIG (France), 3. Univ. Bourgogne, ICB, UMR 6303 CNRS (France))

Presentation style: On-site (in-person)

セッション情報

[A-2] New Materials and Platforms for Photonics

[A-2-01 (Invited)] Integrated active lithium niobate photonic devices

[A-2-02] Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition

[A-2-03] Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode

[A-2-04] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates

[A-2-05] Optical Properties of Innovative GeSe_1-xTe_x Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications

認証

セッション情報

[A-2] New Materials and Platforms for Photonics

[A-2-01 (Invited)] Integrated active lithium niobate photonic devices

[A-2-02] Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition

[A-2-03] Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode

[A-2-04] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates

[A-2-05] Optical Properties of Innovative GeSe1-xTex Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications

認証

[A-2-05] Optical Properties of Innovative GeSe_1-xTe_x Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications