[A-5] UV Sources and Detectors

2022年9月28日(水) 10:45 〜 12:15 101 (1F)

Session Chair: Kouichi Akahane (NICT), Hideki Ono (OKI)

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10:45 〜 11:00

[A-5-01] Ultra-Low Voltage Fin-Shaped AlGaN/GaN Ultraviolet Photodetector with Enhanced Frequency Responses

〇Yuhan Pu¹, Yung C. Liang¹ (1. National Univ. of Singapore (Singapore))

Presentation style: On-site (in-person)

11:00 〜 11:15

[A-5-02] Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations

〇Yao-Luen Shen¹, Chih-Yao Chang¹, Po-Liang Chen¹, Cheng-Chan Tai¹, Tian-Li Wu², Yuh-Renn Wu³, Chih-Fang Huang¹ (1. National Tsing-Hua Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Taiwan Univ. (Taiwan))

Presentation style: On-site (in-person)

11:15 〜 11:30

[A-5-03] Fabrication and optical characterization of GaN microdisk cavites undercut by laser-assisted photo-electrochemical etching

〇Sho Sosumi¹, Kenshin Shimoyoshi¹, Kazuo Uchida¹, Takeyoshi Tajiri¹ (1. The University of Electro-Communications (Japan))

Presentation style: On-site (in-person)

講演取消

11:30 〜 11:45

[A-5-04] [No Show] Effect of Modulation Mg Doped p-Interlayer in 230 nm Far-UVC AlGaN LightEmitting Diodes with Transparent p-Contact Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Nippon Tungsten (Japan))

Presentation style:

11:45 〜 12:00

[A-5-05] Significant Improvement of Injection Efficiency in Deep-UV LD Structures by Light Mg Doping in p-Core Layer

〇Yuri Itokazu^1,2, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Saitama Univ. (Japan))

Presentation style: Online

講演取消

12:00 〜 12:15

[A-5-06] [No Show] Improvement of Injection Efficiency by Modulation Doping into p-Side Waveguide Layer in 290 nm Laser Diode Structures

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1. RIKEN (Japan), 2. Nippon Tungsten (Japan))

Presentation style:

セッション情報

[A-5] UV Sources and Detectors

[A-5-01] Ultra-Low Voltage Fin-Shaped AlGaN/GaN Ultraviolet Photodetector with Enhanced Frequency Responses

[A-5-02] Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations

[A-5-03] Fabrication and optical characterization of GaN microdisk cavites undercut by laser-assisted photo-electrochemical etching

[A-5-04] [No Show] Effect of Modulation Mg Doped p-Interlayer in 230 nm Far-UVC AlGaN LightEmitting Diodes with Transparent p-Contact Layer

[A-5-05] Significant Improvement of Injection Efficiency in Deep-UV LD Structures by Light Mg Doping in p-Core Layer

[A-5-06] [No Show] Improvement of Injection Efficiency by Modulation Doping into p-Side Waveguide Layer in 290 nm Laser Diode Structures

認証