[A-9] Imaging Sensors and Detectors

Thu. Sep 29, 2022 1:30 PM - 3:15 PM 101 (1F)

Session Chair: Mizuki Shirao (Mitsubishi Electric Corp.), Frederic Boeuf (STMicroelectronics)

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1:30 PM - 1:45 PM

[A-9-01] Photonic Band Imaging using Hyperspectral NIRFIS

〇Sho Okada¹, Tomohiro Amemiya^1,2, Hibiki Kagami¹, Yahui Wang¹, Nobuhiko Nishiyama^1,2, Xiao Hu³ (1. Tokyo Tech. (Japan), 2. IIR. (Japan), 3. WPI-MANA, NIMS (Japan))

Presentation style: On-site (in-person)

1:45 PM - 2:00 PM

[A-9-02] Development of Test Element Group Methodology for Time-of-Flight CMOS Image sensor

〇Jungwook Lim¹, Seunghyun Lee¹, Sungyoung Seo¹ (1. Samsung Electronics Co., Ltd. (Korea))

Presentation style: On-site (in-person)

2:00 PM - 2:15 PM

[A-9-03] Wide-range Si-based non-contact temperature sensor using single-photon avalanche diodes

〇Yao Lun Liu¹, Sheng Di Lin¹, Chun Hsien Liu¹, Chun Hao Tsai¹, Ce Fang Shih¹, Jau Yang Wu¹, Chia Ming Tsai¹ (1. Univ. of National Yang Ming Chiao Tung (Taiwan))

Presentation style: On-site (in-person)

2:15 PM - 2:30 PM

[A-9-04] Investigation of Au-InGaAs Alloy for Plasmonic InGaAs Waveguide Photodetector

〇Taketoshi Nakayama¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1. Univ. of Tokyo (Japan))

Presentation style:

2:30 PM - 2:45 PM

[A-9-05] Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film

〇Yuriko Maegami¹, Gangwei Cong¹, Morifumi Ohno¹, Toshihiro Narushima¹, Noritsugu Yamamoto¹, Hitoshi Kawashima¹, Koji Yamada¹ (1. AIST (Japan))

Presentation style: On-site (in-person)

2:45 PM - 3:00 PM

[A-9-06] Novel Process Optimization for Higher SNR of Small Pixel Sized CMOS Image Sensor with FDTI Structure.

〇Hyungeun Yoo¹, Junghyun Kim¹, Taesung Lee¹, Jonghoon Park¹, Yunki Lee¹, Bumsuk Kim¹, Jungchak Ahn¹ (1. Samsung electronics Co., Ltd (Korea))

Presentation style: On-site (in-person)

3:00 PM - 3:15 PM

[A-9-07] Fabrication of 3 µm Pixel Pitch InGaAs Photodiodes using Be Implantation Doping for SWIR sensing

〇Jules Tillement^1,2,3, Cyril Cervera², Jacques Baylet², Olivier Gravrand², Quentin Lalauze², Christophe Jany², Thomas Di Rito², Olivier Saxod², Norbert Moussy², Thierry Baron³, Francois Roy¹, Frederic Boeuf¹ (1. STMicroelectronics (France), 2. Universite Grenoble Alpes, CEA Leti (France), 3. Universite Grenoble Alpes CNRS, LTM (France))

Presentation style: On-site (in-person)

Session information

[A-9] Imaging Sensors and Detectors

[A-9-01] Photonic Band Imaging using Hyperspectral NIRFIS

[A-9-02] Development of Test Element Group Methodology for Time-of-Flight CMOS Image sensor

[A-9-03] Wide-range Si-based non-contact temperature sensor using single-photon avalanche diodes

[A-9-04] Investigation of Au-InGaAs Alloy for Plasmonic InGaAs Waveguide Photodetector

[A-9-05] Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film

[A-9-06] Novel Process Optimization for Higher SNR of Small Pixel Sized CMOS Image Sensor with FDTI Structure.

[A-9-07] Fabrication of 3 µm Pixel Pitch InGaAs Photodiodes using Be Implantation Doping for SWIR sensing

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