〇Guilhem Larrieu^1,2, Luca Bettamin¹, Ines Muguet¹, Fabrice Mathieu¹, Tatsuya Osaki ², Joel Hernandez ², Charline Blatche¹, Maelle Gilotin¹, Laurent Mazenq¹, Frank Bardie¹, Elsa Suberbielle ³, Yoshiho Ikeuchi², Daniel Dunia ³ (1. LAAS-CNRS (France), 2. IIS, Univ. of Tokyo (Japan), 3. Infinity (France))

〇Shintaro Nagata¹, Tsunaki Takahashi^1,2, Haruka Honda¹, Motoki Date¹, Yohsuke Shiiki³, Wataru Tanaka¹, Takuro Hosomi^1,2, Kazuki Nagashima^1,2, Hiroki Ishikuro³, Takeshi Yanagida^1,4 (1. Department of Applied Chemistry, Graduate School of Eng., The Univ. of Tokyo (Japan), 2. JST, PRESTO (Japan), 3. Department of Electronics and Electrical Eng., Keio Univ. (Japan), 4. Inst. for Materials Chemistry and Eng., Kyushu Univ. (Japan))

〇Jiseong Im^1,2, Donghee Kim^1,2, Woo Young Choi^1,2, Jong-Ho Lee^1,2 (1. Seoul National Univ. (Korea), 2. Inter-Univ. Semiconductor Res. Center (ISRC) (Korea))

〇Simon - Grall¹, Yumi Gosselin¹, Inès Muguet², Laurent Jalabert¹, Soo Hyeon Kim¹, Guilhem Larrieu², Nicolas Clement¹ (1. Univ. of Tokyo/LIMMS-CNRS (Japan), 2. LAAS-CNRS (France))

〇Yujeong Jeong¹, Seongbin Hong¹, Gyuweon Jung¹, Wonjun Shin¹, Woo Young Choi¹, Jong-Ho Lee¹ (1. Seoul National Univ. (Korea))

〇Antonin Lavigne¹, Benoit Gilquin², Vincent Jousseaume², Marc Veillerot², Thomas Géhin³, Céline Chevalier³, Cécile Jamois³, Yann Chevolot³, Magali Phaner-Goutorbe¹, Christelle Yeromonahos¹ (1. Univ. Lyon, Ecole Centrale de Lyon (France), 2. Univ. Grenoble Alpes, CEA Leti (France), 3. Univ. Lyon, CNRS (France))