[F-4] Emerging Memory Devices

2022年9月28日(水) 09:00 〜 10:15 201 (2F)

Session Chair: Xu Bai (NanoBridge Semiconductor, Inc.), Atsushi Himeno (Panasonic Corporation)

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09:00 〜 09:15

[F-4-01] Atomic Storage Random Access Memory for DRAM-like Applications

〇Yu-Yu Lin¹, Feng-Min Lee¹, Dai-Ying Lee¹, Ming-Hsiu Lee¹, Keh-Chung Wang¹, Chih-Yuan Lu¹ (1. Macronix International Co., Ltd. (Taiwan))

Presentation style: Online

09:15 〜 09:30

[F-4-02] Read Non-Destructive Dynamic Flash Memory (DFM) with Dual and Double Gates

〇Koji Sakui¹, Nozomu Harada¹ (1. Unisantis Electronics Singapore Pte Ltd. (Singapore))

Presentation style: On-site (in-person)

09:30 〜 09:45

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

〇Sang Ho Lee¹, Jin Park¹, So Ra Min¹, Geon Uk Kim¹, Ga Eon Kang¹, Jun Hyeok Heo¹, Young Jun Yoon², Jae Hwa Seo³, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea), 2. Korea Atomic Energy Res. Inst. (Korea), 3. Korea Electrotechnology Res. Inst. (Korea))

Presentation style: On-site (in-person)

09:45 〜 10:00

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 10¹³ Cycles at 20-ns Write Time without Batch Erase

〇Shoki Miyata¹, Satoru Oshita¹, Hitoshi Kunitake¹, Yuki Okamoto¹, Hiroki Inoue¹, Hiromi Sawai¹, Kunihiro Fukushima¹, Yusuke Komura¹, Takanori Matsuzaki¹, Yoshiyuki Kurokawa¹, Tatsuya Onuki¹, Hajime Kimura¹, Shinya Sasagawa¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

10:00 〜 10:15

[F-4-05] Improving Synaptic Functionalities in Chitosan-based Electric-double-layer Transistors via Random Network Polysilicon Nanowire Channel

〇KI-WOONG PARK¹, Won-Ju Cho¹ (1. Univ. of Kwangwoon (Korea))

Presentation style: Online

セッション情報

[F-4] Emerging Memory Devices

[F-4-01] Atomic Storage Random Access Memory for DRAM-like Applications

[F-4-02] Read Non-Destructive Dynamic Flash Memory (DFM) with Dual and Double Gates

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 10¹³ Cycles at 20-ns Write Time without Batch Erase

[F-4-05] Improving Synaptic Functionalities in Chitosan-based Electric-double-layer Transistors via Random Network Polysilicon Nanowire Channel

認証

セッション情報

[F-4] Emerging Memory Devices

[F-4-01] Atomic Storage Random Access Memory for DRAM-like Applications

[F-4-02] Read Non-Destructive Dynamic Flash Memory (DFM) with Dual and Double Gates

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 1013 Cycles at 20-ns Write Time without Batch Erase

[F-4-05] Improving Synaptic Functionalities in Chitosan-based Electric-double-layer Transistors via Random Network Polysilicon Nanowire Channel

認証

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 10¹³ Cycles at 20-ns Write Time without Batch Erase