[F-5] 3D NAND Flash Memory

2022年9月28日(水) 10:45 〜 12:00 201 (2F)

Session Chair: E Ray Hsieh (National Central Univ.), Keiji Hosotani (KIOXIA Corp.)

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10:45 〜 11:15

[F-5-01 (Invited)] Scaling Perspectives on 3D NAND Flash

〇Akira Goda¹ (1. Micron (Japan))

Presentation style: On-site (in-person)

11:15 〜 11:30

[F-5-02] Analysis of Grain Boundary Effect in GIDL-erase-scheme Vertical CTF Strings for High Stacked CMOS under Array 3-D NAND Flash

〇Moonkyu Song¹, Joe Friedman¹, Sanjay K. Banerjee¹ (1. Univ. of Texas at Austin (United States of America))

Presentation style: Online

11:30 〜 11:45

[F-5-03] Performance Improvement by Applying High-k Materials for 3D NAND Memory Block Oxide with a Lower Thermal Budget

〇Sara Aoki¹, Loan Nguyenhong¹, Muneyuki Otani², Naonori Fujiwara², Genji Nakamura¹ (1. Tokyo Electron Ltd. (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan))

Presentation style: On-site (in-person)

11:45 〜 12:00

[F-5-04] Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories

〇Fugo Nanataki¹, Jun-ichi Iwata^2,3, Kenta Chokawa⁴, Masaaki Araidai^1,4, Atsushi Oshiyama⁴, Kenji Shiraishi^1,4 (1. Univ. of Nagoya (Japan), 2. Tokyo Inst. of Tech. (Japan), 3. Quemix Inc. (Japan), 4. Inst. of Materials and Systems for Sustainability (Japan))

Presentation style: On-site (in-person)

セッション情報

[F-5] 3D NAND Flash Memory

[F-5-01 (Invited)] Scaling Perspectives on 3D NAND Flash

[F-5-02] Analysis of Grain Boundary Effect in GIDL-erase-scheme Vertical CTF Strings for High Stacked CMOS under Array 3-D NAND Flash

[F-5-03] Performance Improvement by Applying High-k Materials for 3D NAND Memory Block Oxide with a Lower Thermal Budget

[F-5-04] Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories

認証