Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-2] Modeling, Simulation and Characterization

2022年9月27日(火) 14:00 〜 16:00 301 (3F)

Session Chair: Satofumi Souma (Kobe Univ.), Seongjae Cho (Gachon Univ.)

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14:00 〜 14:30

[G-2-01 (Invited)] Opportunity of Deep Learning Applicable to TCAD

〇Sanghoon Myung¹, Byungseon Choi¹, Wonik Jang¹, Jinwoo Kim¹, In Huh¹, Jae Myung Choe¹, Young-Gu Kim¹, Dae Sin Kim¹ (1. Samsung Electronics (Korea))

Presentation style: Online

14:30 〜 14:45

[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

〇Shao Chen Lee¹, Yu Ting Chen¹, Cheng Rui Liu¹, Sheng Min Wang¹, Ying Tsan Tang¹ (1. National Central University (Taiwan))

Presentation style: Online

14:45 〜 15:00

[G-2-03] Large Radiation Damages to Si MOS Devices Induced by Intermediate Energy Region X-ray Irradiation

〇Naohiro Matsukawa¹, Koichiro Inoue¹, Takao Sueyama¹ (1. KIOXIA Corp. (Japan))

Presentation style: On-site (in-person)

15:00 〜 15:15

[G-2-04] Resistance Modeling of Short-range Connections: Impact of Current Spreading

〇Davide Tierno¹, Victor Vega-Gonzalez¹, Simone Esposto¹, Ivan Ciofi¹ (1. imec (Belgium))

Presentation style: On-site (in-person)

講演取消

15:15 〜 15:30

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

〇Donghyun Kim^1,2, Sylvain Barraud³, Jae Woo Lee², Gerard Ghibaudo¹, Christoforos Theodorou¹ (1. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, Grenoble INP, CNRS, IMEP-LAHC (France), 2. Electronics and info. engineering, Korea Univ. (Korea), 3. Univ. Grenoble Alpes, CEA, LETI (France))

Presentation style:

15:30 〜 15:45

[G-2-06] Ab initio investigation of Ga doping in Si_1-xGe_x: effect of biaxial strain and interaction of dopants with point-defects

〇Gianluca Rengo^1,2,3, Geoffrey Pourtois^2,4, Clement Porret², Roger Loo², André Vantomme¹ (1. QSP, KU Leuven (Belgium), 2. imec (Belgium), 3. Research Foundation - Flanders (FWO) (Belgium), 4. Plasmant, University of Antwerp (Belgium))

Presentation style: On-site (in-person)

15:45 〜 16:00

[G-2-07 (Late News)] Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Wen Hsin Chang¹ (1. AIST (Japan))

Presentation style: On-site (in-person)

セッション情報

[G-2] Modeling, Simulation and Characterization

[G-2-01 (Invited)] Opportunity of Deep Learning Applicable to TCAD

[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

[G-2-03] Large Radiation Damages to Si MOS Devices Induced by Intermediate Energy Region X-ray Irradiation

[G-2-04] Resistance Modeling of Short-range Connections: Impact of Current Spreading

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

[G-2-06] Ab initio investigation of Ga doping in Si_1-xGe_x: effect of biaxial strain and interaction of dopants with point-defects

[G-2-07 (Late News)] Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets

認証

セッション情報

[G-2] Modeling, Simulation and Characterization

[G-2-01 (Invited)] Opportunity of Deep Learning Applicable to TCAD

[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

[G-2-03] Large Radiation Damages to Si MOS Devices Induced by Intermediate Energy Region X-ray Irradiation

[G-2-04] Resistance Modeling of Short-range Connections: Impact of Current Spreading

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

[G-2-06] Ab initio investigation of Ga doping in Si1-xGex: effect of biaxial strain and interaction of dopants with point-defects

[G-2-07 (Late News)] Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets

認証

[G-2-06] Ab initio investigation of Ga doping in Si_1-xGe_x: effect of biaxial strain and interaction of dopants with point-defects