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Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-5] Image Sensor Technology

2022年9月28日(水) 10:45 〜 12:15 301 (3F)

Session Chair: Takashi Matsukawa (AIST), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

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10:45 〜 11:15

[G-5-01 (Invited)] 3D Sequential Process Integration for CMOS Image Sensor

〇Junpei Yamamoto¹, Keiichi Nakazawa¹, Shigetaka Mori¹, Shintaro Okamoto¹, Akito Shimizu¹, Koichi Baba¹, Nobutoshi Fujii¹, Mutsuo Uehara¹, Katsunori Hiramatsu¹, Hideomi Kumano¹, Akira Matsumoto¹, Koichiro Zaitsu¹, Hidetoshi Onuma¹, Keiji Tatani¹, Tomoyuki Hirano¹, Hayato Iwamoto¹ (1. Sony Semiconductor Solutions Corp. (Japan))

Presentation style: On-site (in-person)

11:15 〜 11:30

[G-5-02] Quantitative Analysis of Petal Flare depending on Pixel Size in CMOS Image Sensors

〇SANGIN BAE¹, Jinmyoung Mok¹, Jeongmin Bae¹, Hyung-Keun Gweon¹, Yunki Lee¹, Younggyu Jeong¹, Bumsuk Kim¹, Jungchak Ahn¹ (1. Samsung Electronics Corp., Ltd. (Korea))

Presentation style: On-site (in-person)

11:30 〜 11:45

[G-5-03] Influence of Neutron Irradiation on CMOS Image Sensors

〇Gyeong Jin Lee¹, Hyungchae Kim¹, Junghyun Kim¹, Myeongeon Kim¹, Seunghan Hong¹, Jonghoon Park¹, Yunki Lee¹, Bumsuk Kim¹, JungChak Ahn¹ (1. Samsung Electronics Co., Ltd. (Korea))

Presentation style: On-site (in-person)

11:45 〜 12:00

[G-5-04] Flexible Integrated Circuits Developed by Layer Transfer Process of FDSOI MOSFETs

〇Masahide Goto¹, Shigeyuki Imura¹ (1. NHK Sci. & Tech. Res. Labs. (Japan))

Presentation style: On-site (in-person)

12:00 〜 12:15

[G-5-05 (Late News)] Near-Infrared Sensitivity Enhancement of Silicon Image Sensor by Photon Confinement with Plasmonic Diffraction

〇Takahito Yoshinaga¹, Kazuma Hashimoto¹, Nobukazu Teranishi², Atsushi Ono^1,2 (1. Shizuoka Univ. (Japan), 2. RIE Shizuoka Univ. (Japan))

Presentation style: On-site (in-person)

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