〇ChunKuei CHEN¹, Sonu Hooda¹, Zihang Fang¹, Shih-Hao Tsai¹, Evgeny Zamburg¹, Aaron Voon-Yew Thean¹ (1. Univ. of Singapore (Singapore))

〇Heng Li Lin¹, Pin Su¹ (1. Inst. of Electronics, Univ. National Yang Ming Chiao Tung (Taiwan))

〇Po-Yi Lee¹, Yi-Chin Luo¹, Pin Su¹ (1. Inst. of Electronics, Univ. of National Yang Ming Chiao Tung (Taiwan))

〇Xiaole Jia¹, Chengji Jin¹, Jiajia Chen¹, Lulu Chou², Huan Liu¹, Zhi Gong¹, Yue Peng², Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

〇Fenning Liu¹, Yue Peng^1,2, Genquan Han^1,2,3, Yan Liu^1,2, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics Xidian Univ. (China), 2. Zhejiang Lab. (China), 3. Hangzhou Institute of Technology, Xidian University (China))

〇Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

〇Xingyu HUANG¹, Yuki ITOYA¹, Zhuo LI¹, Takuya SARAYA¹, Toshiro HIRAMOTO¹, Masaharu KOBAYASHI¹ (1. Univ. of Tokyo (Japan))