Session information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-7] Advanced CMOS: Device Technology

Thu. Sep 29, 2022 9:00 AM - 10:15 AM 301 (3F)

Session Chair: Keisuke Yamamoto (Kyushu Univ.), Anabela Veloso (imec)

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9:00 AM - 9:30 AM

[G-7-01 (Invited)] CMOS Technology Beyond FINFET : Challenges and Opportunities

〇Kai Zhao¹, Julien Frougier¹, Nicolas Loubet¹, Hemanth Jagannathan¹, Brent Anderson¹, Gen Tsutsui¹, Liqiao Qin¹, Jingyun Zhang¹, Shogo Mochizuki¹, Teresa Wu¹, Dechao Guo¹, Huiming Bu¹ (1. IBM (United States of America))

Presentation style: On-site (in-person)

9:30 AM - 9:45 AM

[G-7-02] Mobility Enhancement in Extremely-Thin Body (110) SiGe-on-insulator pMOSFETs using Starting Substrates with Thin SiGe Layers

〇Chia-Tsong Chen¹, Xueyang Han¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

9:45 AM - 10:00 AM

[G-7-03] Atomic-Layer Deposited Tantalum-based Metal Gates (TaN, TaAlC, TaAlN, TaCoN) for Multiple VTH Modulation

〇Moounsuk Choi¹, Boncheol Ku¹, Yu-Rim Jeon¹, Chulwon Chung¹, Changhwan Choi¹ (1. Hanyang university (Korea))

Presentation style: Online

10:00 AM - 10:15 AM

[G-7-04] Mobile-Ionic FETs Based on Amorphous Dielectric with Steep Subthreshold Swing

〇Huan Liu¹, Lulu Chou², Chengji Jin¹, Jiajia Chen¹, Xiao Yu¹, Yan Liu², Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

Presentation style: Online

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