Dong Ru Hsieh¹, Chia Chin Lee¹, 〇Wei Ju Yeh¹, Cheng En Hsieh¹, Huai En Luo¹, Tien Sheng Chao¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

〇Koichiro Iwashige¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

〇Kaixuan Li¹, Yue Peng¹, Wenwu Xiao², Yan Liu¹, Genquan Han^1,3, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China), 3. Hangzhou Institute of Technology, Xidian University (China))

〇Asim Senapati¹, Siddheswar Maikap^1,2, Chen- Ying Lin³, Chun- Yu Liao³, Min- Hung Lee³ (1. Chang Gung University (CGU) (Taiwan), 2. Keelung Chang Gung Memorial Hospital (CGMH) (Taiwan), 3. National Taiwan Normal University (NTNU) (Taiwan))