[H-4] Device Application I: Low Dimensional Devices and Materials

Wed. Sep 28, 2022 9:00 AM - 10:00 AM 302 (3F)

Session Chair: Takamasa Kawanago (Tokyo Tech), Takayuki Arie (Osaka Metropolitan Univ.)

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9:00 AM - 9:15 AM

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

〇Jiang Pu¹, Naoki Wada², Yuhei Takaguchi², Wenjin Zhang³, Zheng Liu⁴, Takahiko Endo², Toshifumi Irisawa⁴, Kazunari Matsuda³, Yuhei Miyauchi³, Yasumitsu Miyata², Taishi Takenobu¹ (1. Nagoya Univ. (Japan), 2. Tokyo Metropolitan Univ. (Japan), 3. Kyoto Univ. (Japan), 4. AIST (Japan))

Presentation style: On-site (in-person)

9:15 AM - 9:30 AM

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

〇Po-Cheng Tsai¹, Chun-Wei Huang², Che-Jia Chang², Shu-Wei Chang², Shih-Yen Lin² (1. Univ. of Taiwan (Taiwan), 2. Res. of Applied Sciences (Taiwan))

Presentation style: Online

9:30 AM - 9:45 AM

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan))

Presentation style: On-site (in-person)

9:45 AM - 10:00 AM

[H-4-04 (Late News)] Magnetic Domain Control and Magnetization Switching of Ferromagnetic Ni Nanolayer Patterns Designed as An Electrode for Si Nanowire Devices

〇Zhe-rui Gu¹, Shinjiro Hara¹ (1. Univ. of Hokkaido (Japan))

Presentation style: Online

Session information

[H-4] Device Application I: Low Dimensional Devices and Materials

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET

[H-4-04 (Late News)] Magnetic Domain Control and Magnetization Switching of Ferromagnetic Ni Nanolayer Patterns Designed as An Electrode for Si Nanowire Devices

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Session information

[H-4] Device Application I: Low Dimensional Devices and Materials

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe2 FET

[H-4-04 (Late News)] Magnetic Domain Control and Magnetization Switching of Ferromagnetic Ni Nanolayer Patterns Designed as An Electrode for Si Nanowire Devices

Authentication

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET