[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

Wed. Sep 28, 2022 1:30 PM - 3:00 PM 302 (3F)

Session Chair: Reina Kaji (Hokkaido Univ.), Shengnan Wang (NTT Basic Research Laboratories)

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1:30 PM - 2:00 PM

[H-6-01 (Invited)] Growth of quantum dots and light source applications

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Atsushi Kanno¹ (1. National Inst. of Info. and Communications Tech. (Japan))

Presentation style: On-site (in-person)

2:00 PM - 2:15 PM

[H-6-02] Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount

〇Ronel Christian Roca¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan))

Presentation style: On-site (in-person)

2:15 PM - 2:30 PM

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

〇Tomohisa Mizuno¹, Kohki Murakawa ¹, Hayato Ban¹, Takashi Aoki¹, Toshiyuki Sameshima² (1. Kanagawa University (Japan), 2. Tokyo Univ. Agri. Tech. (Japan))

Presentation style: Online

2:30 PM - 2:45 PM

[H-6-04] Chemical Properties of a PVD-ZrS₂ Film Underneath Scaled-High-k/IL-ZrO₂ Insulator Systems

〇Masaki Otomo¹, Masaya Hamada¹, Ryo Ono¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Inst. of Tech. (Japan))

Presentation style: On-site (in-person)

2:45 PM - 3:00 PM

[H-6-05] Electromigration at nanocontacts of metal species of high-melting temperatures

〇Yue Tian¹, Shaoqing Du^1,2, Kazuhiko Hirakawa^1,3 (1. Inst. of Indus Sci., Univ. of Tokyo (Japan), 2. Shanghai inst. of microsystem and info. Tech. (China), 3. Inst. for Quantum Info. Electronics, Univ. of Tokyo (Japan))

Presentation style: Online

Session information

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-01 (Invited)] Growth of quantum dots and light source applications

[H-6-02] Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

[H-6-04] Chemical Properties of a PVD-ZrS₂ Film Underneath Scaled-High-k/IL-ZrO₂ Insulator Systems

[H-6-05] Electromigration at nanocontacts of metal species of high-melting temperatures

Authentication

Session information

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-01 (Invited)] Growth of quantum dots and light source applications

[H-6-02] Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

[H-6-04] Chemical Properties of a PVD-ZrS2 Film Underneath Scaled-High-k/IL-ZrO2 Insulator Systems

[H-6-05] Electromigration at nanocontacts of metal species of high-melting temperatures

Authentication

[H-6-04] Chemical Properties of a PVD-ZrS₂ Film Underneath Scaled-High-k/IL-ZrO₂ Insulator Systems