[H-8] Device Application III: Low Dimensional Devices and Materials

2022年9月29日(木) 10:45 〜 12:00 302 (3F)

Session Chair: Yusuke Hoshi (Tokyo City Univ.), Taishi Takenobu (Nagoya Univ.)

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10:45 〜 11:15

[H-8-01 (Invited)] Upconversion Optoelectronic Phenomena in van Der Waals Heterostructures

〇Goki Eda¹ (1. National Univ. of Singapore (Singapore))

Presentation style: On-site (in-person)

11:15 〜 11:30

[H-8-02] Ohmic current injection into single-crystal carbon-doped h-BN toward two-dimensional power device application

〇Supawan Ngamprapawat¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. NIMS (Japan))

Presentation style: On-site (in-person)

11:30 〜 11:45

[H-8-03] PCz sorted SWCNTs-TFT “Electronic Hourglass” and its Recovery Behavior

〇Yang Xu¹, Qinyu Hu^1,2, Yi Zhou^1,2, Jiayi Wang¹, Qi Huang³, Jie Zhao³, Xuelei Liang³, Shengkai Wang^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Key Lab. for the Physics and Chemistry of New Device, Peking Univ. (China))

Presentation style: Online

11:45 〜 12:00

[H-8-04] Accuracy of Equivalent Model in Band-to-band Tunneling Simulation of Semiconductor Nanowires

〇Jo Okada¹, Nobuya Mori¹, Gennady Mil'nikov¹ (1. Osaka Univ. (Japan))