[J-1] Advanced Technologies for GaN Devices

Tue. Sep 27, 2022 11:30 AM - 12:30 PM 303 (3F)

Session Chair: Shinsuke Harada (AIST), Hiroshi Kawarada (Waseda Univ.)

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11:30 AM - 11:45 AM

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode

〇Takeru Kumabe¹, Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1. Dept. of Electronics Nagoya Univ. (Japan), 2. IMaSS Nagoya Univ. (Japan), 3. VBL Nagoya Univ. (Japan), 4. ARC Nagoya Univ. (Japan))

Presentation style: On-site (in-person)

11:45 AM - 12:00 PM

[J-1-02] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)

〇Atsushi Suyama^1,2, Hitoshi Kawanowa², Hideaki Minagawa², Junko Maekawa², Shinji Nagamachi², Masahiko Aoki², Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Ion Technology Center Co., Ltd. (Japan))

Presentation style: On-site (in-person)

12:00 PM - 12:15 PM

[J-1-03] Effect of Atomic Layer Etching using Nitrogen Plasma on Hall Accumulation at MIS Interface of GaN Polarization-Junction Substrate

〇Takuya Hoshii¹, Shonosuke Kimura¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1. Tokyo Tech (Japan))

Presentation style: On-site (in-person)

12:15 PM - 12:30 PM

[J-1-04] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

〇Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

Presentation style: Online

Session information

[J-1] Advanced Technologies for GaN Devices

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode

[J-1-02] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)

[J-1-03] Effect of Atomic Layer Etching using Nitrogen Plasma on Hall Accumulation at MIS Interface of GaN Polarization-Junction Substrate

[J-1-04] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

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Session information

[J-1] Advanced Technologies for GaN Devices

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n+ Diode

[J-1-02] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)

[J-1-03] Effect of Atomic Layer Etching using Nitrogen Plasma on Hall Accumulation at MIS Interface of GaN Polarization-Junction Substrate

[J-1-04] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

Authentication

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode