Session information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[J-10] DRAM, SRAM, and 3D NAND

Thu. Sep 29, 2022 4:00 PM - 5:45 PM 303 (3F)

Session Chair: Norikatsu Takaura (Hitachi, Ltd.), Soichi Sugiura (Micron Technology Inc.)

+Add all to schedule

4:00 PM - 4:15 PM

[J-10-01] Evaluating Pillar Capacitor Profile and Material Property Effects on Advanced DRAM Device Performance

〇Ye Xiao Yu¹, Zhong Ming Liu¹, Guo Bao Xiong¹ (1. Changxin corporate (China))

Presentation style: Online

4:15 PM - 4:30 PM

[J-10-02] What are the Constraints for 1T-DRAM Operation via Reconfigurable Transistor?

〇Rohit Kumar Nirala¹, Sandeep Semwal², Nivedita Rai³, Abhinav Kranti⁴ (1. Indian Institute of Technology Indore (India), 2. Indian Institute of Technology Indore (India), 3. Indian Institute of Technology Indore (India), 4. Indian Institute of Technology Indore (India))

Presentation style: On-site (in-person)

4:30 PM - 4:45 PM

[J-10-03] Evaluate the Impact of Process Variations on Storage Node Contact Area Under Different Etching Models

〇Ye Xiao Yu¹, Zhong Ming Liu¹, Jing Si Cui¹ (1. Changxin corporate (China))

Presentation style: Online

4:45 PM - 5:00 PM

[J-10-04] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO₂ Interface

〇Yihan Zhu¹, Takashi Ohsawa¹ (1. Waseda Univ. (Japan))

Presentation style: On-site (in-person)

5:00 PM - 5:15 PM

[J-10-05] Improvement of Cell Characteristics using Controlling the Current Path in 3D NAND Flash

Daewoong Kang¹, 〇Hyojin Park², Inyoung Lee², Hyowon Kang³, Hyoungsoo Kim⁴ (1. Korea National University of Transportation (Korea), 2. Myongji Univ. (Korea), 3. Korea Int'l School (Korea), 4. California State Polytechnics Univ. (United States of America))

Presentation style: Online

5:15 PM - 5:30 PM

[J-10-06] Analytical Modeling of Intrinsic Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory with a Gaussian Doping Profile

〇Amit Kumar¹, Shubham Sahay¹ (1. Indian Inst. of Tech., Kanpur (India))

Presentation style: Online

5:30 PM - 5:45 PM

[J-10-07] Dually Functional Wide Bandgap Oxides Bilayer SiO₂/Al₂O₃ Based Memristor for Nonvolatile Memory and Photo Sensing

〇Dayanand Kumar¹, Lana Joharji¹, Nazek El Atab¹ (1. King Abdullah University of Science and Technology (Saudi Arabia))

Presentation style: Online

Authentication

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.

Please log in to browse and/or download abstracts.
» Participant Log In

▲

Session information

[J-10] DRAM, SRAM, and 3D NAND

[J-10-01] Evaluating Pillar Capacitor Profile and Material Property Effects on Advanced DRAM Device Performance

[J-10-02] What are the Constraints for 1T-DRAM Operation via Reconfigurable Transistor?

[J-10-03] Evaluate the Impact of Process Variations on Storage Node Contact Area Under Different Etching Models

[J-10-04] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO2 Interface

[J-10-05] Improvement of Cell Characteristics using Controlling the Current Path in 3D NAND Flash

[J-10-06] Analytical Modeling of Intrinsic Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory with a Gaussian Doping Profile

[J-10-07] Dually Functional Wide Bandgap Oxides Bilayer SiO2/Al2O3 Based Memristor for Nonvolatile Memory and Photo Sensing

Authentication

[J-10-04] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO₂ Interface

[J-10-07] Dually Functional Wide Bandgap Oxides Bilayer SiO₂/Al₂O₃ Based Memristor for Nonvolatile Memory and Photo Sensing