Session information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-2] GaN-based High-speed Devices

Tue. Sep 27, 2022 2:00 PM - 3:30 PM 303 (3F)

Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)

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2:00 PM - 2:30 PM

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yuichi Minoura¹, Atsushi Yamada¹, Naoya Okamoto¹, Naoki Hara¹, Yasuhiro Nakasha¹, Junji Kotani¹, Masaru Sato¹, Toshihiro Ohki¹ (1. Fujitsu Ltd. (Japan))

Presentation style: On-site (in-person)

2:30 PM - 2:45 PM

[J-2-02] Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure

〇Jeong Yong Yang¹, Min Jae Yeom¹, Seok Chan Yoon¹, Yeong Je Jeong¹, Chan Ho Lee¹, Sang Hee Kim¹, Seung Yoon Oh¹, GeonWook Yoo¹ (1. Univ. Soongsil (Korea))

Presentation style: On-site (in-person)

2:45 PM - 3:00 PM

[J-2-03] GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Yasuyuki Miyamoto¹ (1. Tokyo Institute of Technology (Japan), 2. NTT Device Technology Laboratories, NTT Corporation (Japan))

Presentation style: Online

3:00 PM - 3:15 PM

[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Taketomo Sato¹ (1. Hokkaido Univ. (Japan))

Presentation style: On-site (in-person)

3:15 PM - 3:30 PM

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

〇Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

Presentation style: On-site (in-person)

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