[J-2] GaN-based High-speed Devices

2022年9月27日(火) 14:00 〜 15:30 303 (3F)

Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)

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14:00 〜 14:30

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yuichi Minoura¹, Atsushi Yamada¹, Naoya Okamoto¹, Naoki Hara¹, Yasuhiro Nakasha¹, Junji Kotani¹, Masaru Sato¹, Toshihiro Ohki¹ (1. Fujitsu Ltd. (Japan))

Presentation style: On-site (in-person)

14:30 〜 14:45

[J-2-02] Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure

〇Jeong Yong Yang¹, Min Jae Yeom¹, Seok Chan Yoon¹, Yeong Je Jeong¹, Chan Ho Lee¹, Sang Hee Kim¹, Seung Yoon Oh¹, GeonWook Yoo¹ (1. Univ. Soongsil (Korea))

Presentation style: On-site (in-person)

14:45 〜 15:00

[J-2-03] GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Yasuyuki Miyamoto¹ (1. Tokyo Institute of Technology (Japan), 2. NTT Device Technology Laboratories, NTT Corporation (Japan))

Presentation style: Online

15:00 〜 15:15

[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Taketomo Sato¹ (1. Hokkaido Univ. (Japan))

Presentation style: On-site (in-person)

15:15 〜 15:30

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

〇Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

Presentation style: On-site (in-person)

セッション情報

[J-2] GaN-based High-speed Devices

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

[J-2-02] Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure

[J-2-03] GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

認証