[J-4] Ultrawide Bandgap Semiconductor Devices

2022年9月28日(水) 09:00 〜 10:15 303 (3F)

Session Chair: Heiji Watanabe (Osaka Univ.), Hironori Okumura (Univ. of Tsukuba)

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09:00 〜 09:30

[J-4-01 (Invited)] Beyond SiC: What’s Next for Kilovolts Power Devices?

〇Yuhao Zhang¹ (1. Virginia Tech (United States of America))

Presentation style: Online

09:30 〜 09:45

[J-4-02] Effect of Lattice Constraint on Structural Stability and Miscibility of (AlxGa1-x)2O3 Films: A First-Principles Study

〇Shuri Fujita¹, Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1. Mie Univ. (Japan))

Presentation style: On-site (in-person)

09:45 〜 10:00

[J-4-03] 2DHG diamond MOSFETs with multi-finger structure for gate width expansion and improved RF characteristics

〇Akira Takahashi¹, Masakazu Arai¹, Yukiko Suzuki¹, Fuga Asai¹, Atsushi Hiraiwa¹, Masaomi Tsuru³, Yutaro Yamaguchi³, Yuji Komatsuzaki³, Ken Kudara³, Hiroshi Kawarada^1,2 (1. Waseda univ Kawarada lab. (Japan), 2. Kagami Memorial Res. (Japan), 3. Mitsubishi Electric Corp. (Japan))

Presentation style: Online

10:00 〜 10:15

[J-4-04 (Late News)] Efficient Optimization of Power Device Structure by Active Learning

〇Hayate Yamano¹, Alexander Kovacs², Johann Fischbacher ², Katsunori Danno ¹, Yusuke Umetani ¹, Tetsuya Shoji ¹, Thomas Schrefl ² (1. Toyota Motor Corp. (Japan), 2. Danube Univ. Krems (Austria))