[J-5] SiC Processes and Characterizations

Wed. Sep 28, 2022 10:45 AM - 12:00 PM 303 (3F)

Session Chair: Kung-Yen Lee (National Taiwan Univ.), Naoki Watanabe (Hitachi, Ltd.)

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10:45 AM - 11:00 AM

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

Presentation style: Online

11:00 AM - 11:15 AM

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

11:15 AM - 11:30 AM

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

〇Kazuhiro "-" TANAKA¹, Keisuke NAGAYA¹, Masashi KATO¹ (1. Nagoya Institute Technology (Japan))

Presentation style: Online

11:30 AM - 11:45 AM

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Kotaro Matsuguchi¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

Presentation style: Online

11:45 AM - 12:00 PM

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

〇Takuma - Yasunami¹, Daisuke - Nakamura¹, Keita - Katayama¹, Yoshiaki - kakimoto^1,2, Toshifumi - Kikuchi¹, Hiroshi - Ikenoue^1,2 (1. Univ. of Kyushu (Japan), 2. Department of Gigaphoton NEXT GLP (Japan))

Presentation style: On-site (in-person)

Session information

[J-5] SiC Processes and Characterizations

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

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