[J-5] SiC Processes and Characterizations

2022年9月28日(水) 10:45 〜 12:00 303 (3F)

Session Chair: Kung-Yen Lee (National Taiwan Univ.), Naoki Watanabe (Hitachi, Ltd.)

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10:45 〜 11:00

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

Presentation style: Online

11:00 〜 11:15

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1. Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

11:15 〜 11:30

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

〇Kazuhiro "-" TANAKA¹, Keisuke NAGAYA¹, Masashi KATO¹ (1. Nagoya Institute Technology (Japan))

Presentation style: Online

11:30 〜 11:45

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Kotaro Matsuguchi¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

Presentation style: Online

11:45 〜 12:00

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

〇Takuma - Yasunami¹, Daisuke - Nakamura¹, Keita - Katayama¹, Yoshiaki - kakimoto^1,2, Toshifumi - Kikuchi¹, Hiroshi - Ikenoue^1,2 (1. Univ. of Kyushu (Japan), 2. Department of Gigaphoton NEXT GLP (Japan))

Presentation style: On-site (in-person)

セッション情報

[J-5] SiC Processes and Characterizations

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

認証