Session information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-8] Si and SiC Power Devices

Thu. Sep 29, 2022 10:45 AM - 12:00 PM 303 (3F)

Session Chair: Tetsuya Nitta (Mitsubishi Electric Corp.), Tomoaki Hatayama (Sumitomo Electric Industries, Ltd.)

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10:45 AM - 11:15 AM

[J-8-01 (Invited)] Progress of Low-Voltage Si-Power MOSFETs

〇Wataru Saito¹ (1. Kyushu Univ. (Japan))

Presentation style: On-site (in-person)

11:15 AM - 11:30 AM

[J-8-02] Poly Back Seal Effect on Platinum Solid Phase Diffusion in High Speed Switching Diodes

〇Yuhki Fujino¹, Shotaro Baba¹, Hiroaki Kato¹, Shingo Sato¹, Katsura Miyashita¹ (1. Toshiba Electric Devices & Storage Corp. (Japan))

Presentation style: On-site (in-person)

11:30 AM - 11:45 AM

[J-8-03] Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals

〇Yudai Kitamura¹, Takeshi Tawara², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: On-site (in-person)

11:45 AM - 12:00 PM

[J-8-04] Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs

〇Keisuke Kashiwa¹, Mitsuki Takahashi¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan))

Presentation style: On-site (in-person)

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