[J-9] GaN Power Devices

2022年9月29日(木) 13:30 〜 15:00 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

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13:30 〜 14:00

[J-9-01 (Invited)] Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT

〇Akira Nakajima¹, Hirohisa Hirai¹, Yoshinao Miura¹, Shinsuke Harada¹ (1. AIST (Japan))

Presentation style: On-site (in-person)

14:00 〜 14:15

[J-9-02] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui (Japan), 2. SCIOCS (Japan), 3. Hosei Univ. (Japan))

Presentation style: Online

14:15 〜 14:30

[J-9-03] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure

〇Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

Presentation style: Online

14:30 〜 14:45

[J-9-04] Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform

〇Deepthi Cingu¹, Olga Syshchyk¹, Dirk Wellekens¹, Thibault Cosnier¹, Matteo Borga¹, Urmimala Chatterjee ¹, Benoit Bakeroot², Niels Posthuma¹, Stefaan Decoutere¹ (1. Imec (Belgium), 2. Center for Microsystems Technology (Belgium))

Presentation style: On-site (in-person)

14:45 〜 15:00

[J-9-05] Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling

〇Florian Rigaud-Minet^1,2, Julien Buckley¹, William Vandendaele¹, Stéphane Bécu¹, Matthew Charles¹, Jérôme Biscarrat¹, Romain Gwoziecki¹, Charlotte Gillot¹, Veronique Sousa¹, Hervé Morel², Dominique Planson² (1. CEA, LETI and Univ. Grenoble Alpes (France), 2. Univ. Lyon, INSA Lyon, Ampère Lab. (France))

Presentation style: On-site (in-person)

セッション情報

[J-9] GaN Power Devices

[J-9-01 (Invited)] Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT

[J-9-02] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

[J-9-03] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure

[J-9-04] Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform

[J-9-05] Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling

認証