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Oral Presentation

12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials

[K-2] Advanced Sensor Systems

2022年9月27日(火) 14:00 〜 15:15 304 (3F)

Session Chair: Koh Johguchi (Shinshu Univ.), Jerald Yoo (National Univ. of Singapore)

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14:00 〜 14:15

[K-2-01] High-Resolution Sensor Interface IC with Switched-Capacitor Frequency Locked Loop Circuit for Battery-less RF Backscatter Sensing

〇Hiroki Sato¹, Hiroyuki Ishiwata², Shinji Murata², Noboru Ishihara³, Hiroyuki Ito³ (1. Nisshinbo Micro Devices Inc. (Japan), 2. ALPS ALPINE Corp., Ltd. (Japan), 3. Tokyo Inst. of Tech. (Japan))

Presentation style: On-site (in-person)

14:15 〜 14:30

[K-2-02] A 22nm CMOS 1.25V 29pW 0.000013 mm² Supply Voltage Detector Using Stacked 3 Thick-Gate-Oxide PMOSs and Dynamic Leakage Suppression Buffer

〇Yuma Hayashi¹, Kiichi Niitsu¹ (1. Nagoya Univ. (Japan))

Presentation style: On-site (in-person)

14:30 〜 14:45

[K-2-03] A High-Precision Wearable Perspiration Monitor with 0.18 µm BCD Process and PDMS Micro Air-Flow Path

〇Ayumu Yamamoto¹, Yuta Kaga¹, Tomohiro Aso¹, Shin-Ichiro Kuroki², Hideya Momose³, Koh Johguchi¹ (1. Shinshu Univ. (Japan), 2. Hiroshima Univ. (Japan), 3. Skinos Co.,Ltd. (Japan))

Presentation style: On-site (in-person)

14:45 〜 15:00

[K-2-04] An Indirect Measuring Method for the Flow-Through Current using Multi-Output MOSFET

〇Tomochika Harada¹, Keito Yamaguchi¹, Shinya Suzuki¹, Kota Oikawa¹ (1. Yamagata Univ. (Japan))

Presentation style: On-site (in-person)

15:00 〜 15:15

[K-2-05 (Late News)] A Z-gate Layout MOSFET Design and Verification of Radiation Hardness against γ-ray Total Ionizing Dose Effect

〇Kaito Kuroki¹, Arisa Kimura¹, Kenji Hirakawa², Masayuki Iwase², Munehiro Ogasawara², Takashi Yoda², Noboru Ishihara^1,2, Hiroyuki Ito^1,2 (1. Nano Sensing Unit, Inst. of Innovative Res. , Tokyo Inst. of Tech. (Japan), 2. Lab. for Future Interdisciplinary Res. of Sci. and Tech. , Tokyo Inst. of Tech. (Japan))

Presentation style: On-site (in-person)

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