[A-5] UV Sources and Detectors

[A-5-01] Ultra-Low Voltage Fin-Shaped AlGaN/GaN Ultraviolet Photodetector with Enhanced Frequency Responses

〇Yuhan Pu¹, Yung C. Liang¹ (1. National Univ. of Singapore (Singapore))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-5-01

This paper presents an ultra-low voltage AlGaN/GaN ultraviolet (UV) photodetector with trench-fin-shaped structural design. Owing to the intrinsic polarization field and fin-shaped field plates, the collection of photo-carriers is effective at a bias voltage as low as 200 mV, with the 365-nm photocurrent to dark current ratio above 10^5 and the peak UV responsivity around 10^3 measured. The enhanced frequency response was also observed up to 1 kHz on 365-nm UV switching. The proposed fin-shaped UV photodetector is very suitable for future ultra-low voltage III-V integrated circuits.