1:45 PM - 2:00 PM
[A-6-02] All III-arsenide 1.6 μm-band InAs quantum dot lasers
on InP(001) with a low threshold current density
Presentation style: On-site (in-person)
https://doi.org/10.7567/SSDM.2022.A-6-02
We have grown an L-band quantum dot (QD) laser with only III-arsenide layers on InP(001) by molecular beam epitaxy. The threshold current density of the fab-ricated QD laser was 633 A/cm2, which is the lowest value for QD lasers in the 1.6 μm-wavelength region.
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