2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

05: Photonics: Devices / Integration / Related Technology

[A-6] III-V Light Sources

Wed. Sep 28, 2022 1:30 PM - 3:45 PM 101 (1F)

Session Chair: Yuhki Itoh (Sumitomo Electric Industries, Ltd.), Nobuhiko Ozaki (Wakayama Univ.)

1:45 PM - 2:00 PM

[A-6-02] All III-arsenide 1.6 μm-band InAs quantum dot lasers
on InP(001) with a low threshold current density

〇Jinkwan Kwoen1, Natalia Morais1, Wenbo Zhan1, Satoshi Iwamoto1,2, Yasuhiko Arakawa1 (1. NanoQuine, Univ. of Tokyo (Japan), 2. RCAST, Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-6-02

We have grown an L-band quantum dot (QD) laser with only III-arsenide layers on InP(001) by molecular beam epitaxy. The threshold current density of the fab-ricated QD laser was 633 A/cm2, which is the lowest value for QD lasers in the 1.6 μm-wavelength region.

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