[A-6] III-V Light Sources

[A-6-02] All III-arsenide 1.6 μm-band InAs quantum dot lasers
on InP(001) with a low threshold current density

〇Jinkwan Kwoen¹, Natalia Morais¹, Wenbo Zhan¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1. NanoQuine, Univ. of Tokyo (Japan), 2. RCAST, Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-6-02

We have grown an L-band quantum dot (QD) laser with only III-arsenide layers on InP(001) by molecular beam epitaxy. The threshold current density of the fab-ricated QD laser was 633 A/cm2, which is the lowest value for QD lasers in the 1.6 μm-wavelength region.