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[A-6-08] Development of Epitaxial Regrowth for GaAs-Based Quantum Dot PCSELs
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.A-6-08
We present the development of epitaxial regrowth processes to allow the realization of a PCSEL utilizing a quantum dot active region. An electron microscope-based study investigates the effect of group-III surface mobility on grating infill. An optimal process utilizing AlGaAs in-fill is used to fabricate QD devices that display room temperature ground state lasing at 1230 nm.
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