[A-6] III-V Light Sources

[A-6-08] Development of Epitaxial Regrowth for GaAs-Based Quantum Dot PCSELs

〇Adam F McKenzie¹, Aye M. Kyaw¹, Ben C. King¹, Neil D. Gerrard¹, Kenichi Nishi², Keizo Takemasa², Mitsuru Sugawara², Calum H. Hill³, David T. D. Childs³, Richard J. E. Taylor³, Donald A. MacLaren¹, Richard A. Hogg¹ (1. Univ. of Glasgow (UK), 2. QD Laser Inc. (Japan), 3. Vector Photonics Ltd. (UK))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.A-6-08

We present the development of epitaxial regrowth processes to allow the realization of a PCSEL utilizing a quantum dot active region. An electron microscope-based study investigates the effect of group-III surface mobility on grating infill. An optimal process utilizing AlGaAs in-fill is used to fabricate QD devices that display room temperature ground state lasing at 1230 nm.