[B-2] Wide Bandgap Materials

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

〇Mayu Ueda¹, Kyosuke Hayasaka¹, Kyotaro Kanehisa¹, Yasuhiro Takahashi¹, Chiyuki Wakabayashi¹, Taisuke Kageura², Hiroshi Kawarada^1,3 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-2-03

The highest nitrogen-doped CVD diamond ([N] = 8×10^(20) [cm-3]) was prepared by adding the same amount of CO2 as CH4. These thin films were evaluated by X-ray diffractometer (XRD) - including a reciprocal space mapping (RSM) measurement, Raman spectroscopy, and cross-sectional TEM images. From the physical properties, it was found that under optimum gas mixture (CH4: 2.0 [%], CO2: 2.0 [%], N2: 8.0 [%], H2: 88.0 [%]), high quality crystal was obtained de-spite the highest nitrogen content.