2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-3] Group IV Materials I

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 102 (1F)

Session Chair: Taizoh Sadoh (Kyushu Univ.), Akira Heya (Univ. of Hyogo)

4:45 PM - 5:00 PM

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

〇Wei-Chen Wen1, Bernd Tillack1,2, Yuji Yamamoto1 (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.B-3-02

Mechanism of self-ordering of Ge nanodots in SiGe was investigated by fabricating multilayer Ge nano-dots with SiGe spacers on Si0.4Ge0.6 virtual substrate. By depositing the SiGe at 550 °C or raising Ge content, the SiGe surface is smooth, resulting in vertical-ly-aligned Ge nanodots to reduce strain energy. By depositing at 500 °C and lowering Ge content, check-erboard-like surface forms and the following Ge nan-odots grow at staggered position to reduce surface energy.

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