[B-3] Group IV Materials I

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

〇Wei-Chen Wen¹, Bernd Tillack^1,2, Yuji Yamamoto¹ (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.B-3-02

Mechanism of self-ordering of Ge nanodots in SiGe was investigated by fabricating multilayer Ge nano-dots with SiGe spacers on Si0.4Ge0.6 virtual substrate. By depositing the SiGe at 550 °C or raising Ge content, the SiGe surface is smooth, resulting in vertical-ly-aligned Ge nanodots to reduce strain energy. By depositing at 500 °C and lowering Ge content, check-erboard-like surface forms and the following Ge nan-odots grow at staggered position to reduce surface energy.