[B-3] Group IV Materials I

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

〇Koki Nozawa¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-3-03

Among n-type impurities, P doping in amorphous Ge significantly promoted the lateral growth during solid-phase crystallization, resulting in large grains. The electron mobility was the highest among n-type polycrystalline Ge directly grown on insulators at low temperatures.