2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-3] Group IV Materials I

2022年9月27日(火) 16:15 〜 18:00 102 (1F)

Session Chair: Taizoh Sadoh (Kyushu Univ.), Akira Heya (Univ. of Hyogo)

17:00 〜 17:15

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

〇Koki Nozawa1, Takeshi Nishida1, Takashi Suemasu1, Kaoru Toko1 (1. Univ. of Tsukuba (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-3-03

Among n-type impurities, P doping in amorphous Ge significantly promoted the lateral growth during solid-phase crystallization, resulting in large grains. The electron mobility was the highest among n-type polycrystalline Ge directly grown on insulators at low temperatures.

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