Molecular beam epitaxy of Si1−xSnx layers with 10%-Sn content on Si1−yGey buffers

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

2022年9月27日(火) 16:15 〜 18:00 102 (1F)

Session Chair: Taizoh Sadoh (Kyushu Univ.), Akira Heya (Univ. of Hyogo)

17:30 〜 17:45

〇Kazuaki Fujimoto¹ (1. Nagoya Univ. (Japan))

Presentation style: Online

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