2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-3] Group IV Materials I

2022年9月27日(火) 16:15 〜 18:00 102 (1F)

Session Chair: Taizoh Sadoh (Kyushu Univ.), Akira Heya (Univ. of Hyogo)

17:45 〜 18:00

[B-3-06] Study on doping by ion implantation to Si1−xSnx epitaxial layers

〇Tatsuki Oiwa1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1. Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-3-06

A phosphorus doping study was conducted in Si1−xSnx (x = 0.017–0.079) epitaxial layers grown on Si(001) by RF sputtering. First, we found high thermal stability of the Si1−xSnx layer even at 600 °C regardless of the ultra-low Sn solubility in Si. Thanks to this fact, we have successfully realized n-type Si1−xSnx layers with wide-ranging electron concentrations (6.4×1017–1.0×1020 cm–3) without the Sn precipitation by the ion-implantation and the activation annealing at 600 °C. Additionally, we found that pseudomorphic grown layers possess comparable electron mobility with that of Si bulk.

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