[B-5] Advanced materials, Nanofabrication, and Thin Films I

[B-5-01] Fabrication and optical characterization of InGaN/GaN MQW fine nanopillar arrays by low-damage HEATE process

〇Takeki Aikawa¹, Akihiko Kikuchi^1,2,3 (1. Sophia Univ. (Japan), 2. Sophia Photonics Research Center (Japan), 3. Sophia Semiconductor Research Institute (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-5-01

Position-controlled high-aspect ultrafine InGaN/GaN nanopillar arrays ranging from 9 to 1000 nm in diameter and 300 nm in height have been fabri-cated via hydrogen environment anisotropic thermal etching (HEATE) method, which utilizes a SiO2 etching mask and hydrogen-assisted thermal decomposition of GaN. The blue photoluminescence emission was ob-tained at room temperature even from 9 nm diameter ultrafine nanopillars, and the optical properties of InGaN quantum wells were systematically character-ized over a wide range of two orders of magnitude.