2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-6] Advanced materials, Nanofabrication, and Thin Films II

2022年9月28日(水) 13:30 〜 15:15 102 (1F)

Session Chair: Yu-Lun Chueh (National Tsing-Hua Univ.), Akihiko Kikuchi (Sophia Univ.)

14:45 〜 15:00

[B-6-06] Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface

〇Shunsuke Nishimura1, Noriyuki Taoka1, Akio Ohta1, Katsunori Makihara1, Seiichi Miyazaki1 (1. Univ. of Nagoya (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-6-06

Ni and Ge films with various thicknesses are formed on a SiO2 layer. Ni-germanides were formed by annealing in an N2 ambient condition. Consequently, an ultra-thin Ni-germanide film with a mono-crystalline phase and a smooth surface was successfully formed. In the formation, reductive and oxidative reactions occurred in the films, which are quite important for determining a composition of the Ni-germanide.

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