11:30 〜 11:45
[B-8-03] Improved Carrier Mobility of Sn-Doped Ge Ultrathin (<50) Films on Insulator by a-Si Capping in Solid-Phase Crystallization
Presentation style: Online
https://doi.org/10.7567/SSDM.2022.B-8-03
Thin poly-Ge films (thickness: below 50 nm) having high
carrier mobility are required for advanced thin-film
devices. However, carrier mobility of poly-Ge films
obtained by conventional solid-phase crystallization
(SPC) significantly decreases with decreasing thickness
below 50 nm. To solve this problem, we develop an
interface-modulated SPC of Sn-doped Ge combined with
a-Si capping. In the present study, we investigate growth
characteristics of a-Si capped Sn-doped Ge films on
insulator. It is clarified that a-Si capping enhances SPC of
Sn-doped Ge films and results in large crystal grains,
which improves the carrier mobility of Sn-doped Ge thin
films. This technique will be useful to realize advanced
thin-film devices for next-generation electronics.
carrier mobility are required for advanced thin-film
devices. However, carrier mobility of poly-Ge films
obtained by conventional solid-phase crystallization
(SPC) significantly decreases with decreasing thickness
below 50 nm. To solve this problem, we develop an
interface-modulated SPC of Sn-doped Ge combined with
a-Si capping. In the present study, we investigate growth
characteristics of a-Si capped Sn-doped Ge films on
insulator. It is clarified that a-Si capping enhances SPC of
Sn-doped Ge films and results in large crystal grains,
which improves the carrier mobility of Sn-doped Ge thin
films. This technique will be useful to realize advanced
thin-film devices for next-generation electronics.
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