2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[B-8] Group IV Materials II

2022年9月29日(木) 10:45 〜 12:00 102 (1F)

Session Chair: Kentaro Watanabe (Shinshu Univ.), Tomohiro Yamaguchi (Kogakuin Univ.)

11:30 〜 11:45

[B-8-03] Improved Carrier Mobility of Sn-Doped Ge Ultrathin (<50) Films on Insulator by a-Si Capping in Solid-Phase Crystallization

〇Takaya Nagano1, Ryutaro Hara1, Kenta Moto1, Keisuke Yamamoto1, Taizoh Sadoh1 (1. Univ. of Kyushu (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.B-8-03

Thin poly-Ge films (thickness: below 50 nm) having high
carrier mobility are required for advanced thin-film
devices. However, carrier mobility of poly-Ge films
obtained by conventional solid-phase crystallization
(SPC) significantly decreases with decreasing thickness
below 50 nm. To solve this problem, we develop an
interface-modulated SPC of Sn-doped Ge combined with
a-Si capping. In the present study, we investigate growth
characteristics of a-Si capped Sn-doped Ge films on
insulator. It is clarified that a-Si capping enhances SPC of
Sn-doped Ge films and results in large crystal grains,
which improves the carrier mobility of Sn-doped Ge thin
films. This technique will be useful to realize advanced
thin-film devices for next-generation electronics.

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