[C-10] Spintronics II

[C-10-02] Superconducting Diode Effect in Ferromagnet-inserted Noncentrosymmetric Superconducting Multilayers

〇Hideki Narita¹, Jun Ishizuka², Ryo Kawarazki¹, Daisuke Kan^1,3, Yoichi Shiota^1,3, Takahiro Moriyama^1,3, Yuichi Shimakawa^1,3, Ognev V. Alexey⁴, Samardak S. Alexander⁴, Youichi Yanase^5,6, Teruo Ono^1,3,4,7 (1. ICR, Kyoto Univ. (Japan), 2. ETH Zurich (Switzerland), 3. CSRN, Kyoto Univ. (Japan), 4. Far Eastern Federal Univ. (Russia), 5. Dept. of Phys. , Kyoto Univ. (Japan), 6. IMS (Japan), 7. CSRN, Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.C-10-02

The diode effect in superconductors, called the superconducting diode effect (SDE), implies a superconducting state in one direction and a normal-conducting state in the other direction. Recently, the SDE has been discovered in the Nb/V/Ta superlattice with a polar structure. However, the SDE requires an external magnetic field, which limits its practical application. We present an SDE in a zero-field using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The polarity of the SDE is controlled by the magnetization direction of the ferromagnetic layer. These findings enable the development of novel non-volatile memories and logic circuits with ultralow power consumption using such SDEs.