Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers

Julian Sasaki

doi:https://doi.org/10.7567/SSDM.2022.C-10-06

講演情報

Oral Presentation

09: Novel Functional / Quantum / Spintronic Devices and Materials

[C-10] Spintronics II

2022年9月29日(木) 16:00 〜 17:30 103 (1F)

Session Chair: Ken-ichi Aoshima (NHK STRL), Ken Morita (Chiba Univ.)

17:15 〜 17:30

[C-10-06 (Late News)] Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers

〇Julian Sasaki¹, Shigeki Takahashi², Yoshiyuki Hirayama², Pham Nam Hai¹ (1. Tokyo Institute of Technology (Japan), 2. Samsung R&D Institute Japan (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-10-06

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講演情報

[C-10] Spintronics II

[C-10-06 (Late News)] Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers

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