[C-8] Spintronics I

[C-8-04] Bias voltage and temperature dependence of electron-spin polarization in InAs quantum dots tunnel-coupled with a GaNAs quantum well

SOYOUNG PARK¹, 〇HIROTO KISE¹, SATOSHI HIURA¹, JUNICHI TAKAYAMA¹, KAZUHISA SUEOKA¹, AKIHIRO MURAYAMA¹ (1. Hokkaido Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-8-04

Bias voltage and temperature dependence of electron-spin polarization in InAs quantum dots (QDs) tunnel-coupled with a GaNAs quantum well have been investigated. The state filling effect in QDs becomes suppressed with increasing temperature because of the thermal excitation and thermal escape of
electron spins, leading to the enhanced circular polarization degree of QD luminescence. We also observe a large difference in the electron-spin polarization at QD excited states by changing the applied bias voltage at higher temperature of 260 K. The high spin polarization can be attributed to the thermally activated spin filtering in a GaNAs quantum well.