11:30 AM - 11:45 AM
[D-1-01] Comparison of the H2S gas response characteristics of semiconductor gas sensors (HFGFET-, TFT-, and resistor-type) fabricated on the same wafer.
Presentation style: On-site (in-person)
https://doi.org/10.7567/SSDM.2022.D-1-01
So far, various types of semiconductor gas sensors have been proposed. However, there are few compara-tive studies of various sensor types. Here we compare the H2S gas-sensing properties (response and SNR) of HFGFET-, TFT-, and resistor-type gas sensors. FET-type (HFGFET- and TFT-type) gas sensors have different responses depending on the operating region. FET-type gas sensors have the largest response and SNR when operating in the subthreshold region and at VGS = Vth, respectively. In contrast, the resistor-type sensor showed a similar response and SNR regardless of the biasing condition.
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