[D-1] Micro/Nano Technologies for Biosensing and Interfaces

[D-1-01] Comparison of the H₂S gas response characteristics of semiconductor gas sensors (HFGFET-, TFT-, and resistor-type) fabricated on the same wafer.

〇Gyuweon Jung¹, Wonjun Shin¹, Hunhee Shin¹, Seongbin Hong¹, Yujeong Jeong¹, Kangwook Choi¹, Jinwoo Park¹, Donghee Kim¹, Chayoung Lee¹, Jaehyeon Kim¹, Woo Young Choi¹, Jong-Ho Lee¹ (1. Seoul Nat. Univ. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.D-1-01

So far, various types of semiconductor gas sensors have been proposed. However, there are few compara-tive studies of various sensor types. Here we compare the H2S gas-sensing properties (response and SNR) of HFGFET-, TFT-, and resistor-type gas sensors. FET-type (HFGFET- and TFT-type) gas sensors have different responses depending on the operating region. FET-type gas sensors have the largest response and SNR when operating in the subthreshold region and at VGS = Vth, respectively. In contrast, the resistor-type sensor showed a similar response and SNR regardless of the biasing condition.