2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

07: Organic / Molecular / Bio-electronics

[D-1] Micro/Nano Technologies for Biosensing and Interfaces

2022年9月27日(火) 11:30 〜 12:30 104 (1F)

Session Chair: Takashi Tokuda (Tokyo Tech), Cheng-Hsien Liu (National Tsing Hua Univ.)

11:30 〜 11:45

[D-1-01] Comparison of the H2S gas response characteristics of semiconductor gas sensors (HFGFET-, TFT-, and resistor-type) fabricated on the same wafer.

〇Gyuweon Jung1, Wonjun Shin1, Hunhee Shin1, Seongbin Hong1, Yujeong Jeong1, Kangwook Choi1, Jinwoo Park1, Donghee Kim1, Chayoung Lee1, Jaehyeon Kim1, Woo Young Choi1, Jong-Ho Lee1 (1. Seoul Nat. Univ. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.D-1-01

So far, various types of semiconductor gas sensors have been proposed. However, there are few compara-tive studies of various sensor types. Here we compare the H2S gas-sensing properties (response and SNR) of HFGFET-, TFT-, and resistor-type gas sensors. FET-type (HFGFET- and TFT-type) gas sensors have different responses depending on the operating region. FET-type gas sensors have the largest response and SNR when operating in the subthreshold region and at VGS = Vth, respectively. In contrast, the resistor-type sensor showed a similar response and SNR regardless of the biasing condition.

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