[D-3] Advanced Technologies for Bio- and Chemical Sensing

[D-3-05] H₂S Sensing Characteristics of the Amplifier Circuit Consisting of pFET-type and Resistor-type Gas Sensors

〇Yujeong Jeong¹, Seongbin Hong¹, Gyuweon Jung¹, Wonjun Shin¹, Woo Young Choi¹, Jong-Ho Lee¹ (1. Seoul National Univ. (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.D-3-05

We investigate the H2S sensing characteristics of the amplifier circuit consisting of the pFET- and resistor-type gas sensor. The pFET- and resistor-type gas sensors are fabricated on the same substrate. When exposed to H2S gas, the drain current of the pFET-type gas sensor decreases while the current of the resistor-type gas sensor increases. The Vout of the amplifier circuit changes more sensitively to gas molecules than that of other amplifier circuits since the pFET-type sensor has complementary sensing characteristics to the resistor-type sensor.